IGI60L1111B1MXUMA1 vs IGI60L1414B1MXUMA1 比較

詳細並排比較 IGI60L1111B1MXUMA1 由 Infineon 與 IGI60L1414B1MXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IGI60L1111B1MXUMA1 IGI60L1111B1MXUMA1 - 600V CoolGaN Half-Bridge | Infineon

IGI60L1111B1MXUMA1 - 600V CoolGaN Half-Bridge | Infineon

IGI60L1111B1MXUMA1 ✓ 啟用中
Infineon
IGI60L1414B1MXUMA1 IGI60L1414B1MXUMA1 - 600V GaN Half-Bridge 140mΩ | Infineon

IGI60L1414B1MXUMA1 - 600V GaN Half-Bridge 140mΩ | Infineon

IGI60L1414B1MXUMA1 ✓ 啟用中

規格比較

參數 IGI60L1111B1MXUMA1 IGI60L1414B1MXUMA1
品牌 Infineon Infineon
類別 MOSFETs Transistors
生命週期狀態 啟用中 啟用中
Technology GaN (Gallium Nitride), enhancement-mode GaN (Gallium Nitride), enhancement-mode
Configuration Half-Bridge (integrated gate driver + bootstrap diode) Half-bridge (high-side + low-side switch)
Drain-Source Voltage (VDS) 600 V 600 V
On-Resistance (RDS(on), typ) 110 mΩ —
輸出電流 (最大) 7.4 A —
Gate-Drive Supply (VCC) 10 V to 20 V —
封裝 PG-TFLGA-27-2 (6 x 8 mm) PG-TFLGA-27-2
Integrated Bootstrap Diode Yes —
PWM Input Logic Level 3.3 V / 5 V compatible —
CoolGaN Generation G5 —
安裝類型 Surface Mount Surface Mount
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
MSL 等級 [DATA_NEEDED: MSL rating] —
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Series — CoolGaN™ (IGI family)
Continuous Drain Current (ID) — 6.0 A
On-Resistance (RDS(on)) — 140 mΩ (per switch)
Gate Driver — Integrated (high-side + low-side)
Level Shifter — Integrated high-voltage level shifter
Bootstrap Diode — Integrated ultra-fast low-resistance
Source Drive Current — +0.29 A
Sink Drive Current — -0.7 A
Turn-On/Turn-Off — Application-configurable (external Rg)
Application Category — SMPS, PFC, motor drive, Class-D audio

資料表與資源

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