IGLR70R270D2SXUMA1 vs ISC011N04NM7VATMA1 Comparison

Detailed side-by-side comparison of IGLR70R270D2SXUMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IGLR70R270D2SXUMA1

IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΞ© CoolGaN G5 | Infineon

IGLR70R270D2SXUMA1 βœ“ Active
Infineon
ISC011N04NM7VATMA1

ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 βœ“ Active

Specification Comparison

Parameter IGLR70R270D2SXUMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.13 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaNβ„’ G5 OptiMOS 7 Power-Transistor
Technology Gallium Nitride (GaN) HEMT, enhancement-mode Trench MOSFET, silicon
Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 700 V 40 V
Continuous Drain Current (ID, Tc) 7.3 A β€”
Power Dissipation (PD, Tc) 28 W β€”
On-State Resistance (RDS(on), typ.) 270 mΞ© β€”
Package PG-TSON-8-8 (ThinPAK) PG-TDSON-8 (source-down)
Mounting Type Surface Mount Surface Mount
Gate Drive 0 to 12 V (enhancement-mode, internal gate diode) β€”
Wafer Process 200 mm (8-inch) GaN-on-Si β€”
RoHS Status Compliant β€”
Operating Temperature Range -40C to +150C (junction) -55 Β°C to +175 Β°C (TJ)
Reverse Recovery Charge (Qrr) 0 nC (no body diode) β€”
FET Type β€” N-Channel
Continuous Drain Current (ID) at TA=25Β°C β€” 38 A
Continuous Drain Current (ID) at TC β€” 256 A
On-Resistance RDS(on) max @ VGS=10V β€” 1.1 mΞ©
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 136 W
Gate Threshold Voltage (Vth) β€” Up to 3.2 V
Short-Circuit Withstand β€” Yes (current-limited)
RoHS Compliance β€” Compliant (per Infineon product page)
MSL Level β€” MSL 1 (per JEDEC J-STD-020)

Datasheets & Resources

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