IGLT65R035D2ATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IGLT65R035D2ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGLT65R035D2ATMA1 - 650V 47A CoolGaNβ’ G5 Transistor | Infineon
IGLT65R035D2ATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IGLT65R035D2ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.10 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaNβ’ G5 TOLT | β |
| Transistor Type | N-Channel enhancement-mode GaN HEMT | β |
| Drain-Source Voltage (Vdss) | 650 V | β |
| Continuous Drain Current (Id) at Tc | 47 A | β |
| Maximum Power Dissipation (Pd) at Tc | 154 W | β |
| On-Resistance (Rds(on)) | [DATA_NEEDED: typical Rds(on) in mohm] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | β |
| Input Capacitance (Ciss) at Vds=400V | 540 pF | β |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | β |
| Package | PG-HDSOP-16-8 (top-side cooled) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Cooling Configuration | Top-side cooled (TOLT) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Production Wafer Size | 200 mm (8 inch) | β |
| Series | β | OptiMOS 3 |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Technology | β | Trench MOSFET (OptiMOS 3) |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |