IGLT65R035D2ATMA1 vs BSC076N04NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IGLT65R035D2ATMA1 disebabkan oleh Infineon dan BSC076N04NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IGLT65R035D2ATMA1 BSC076N04NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN™ G5 TOLT —
Jenis Transistor N-Channel enhancement-mode GaN HEMT —
Drain-Source Voltage (Vdss) 650 V —
Continuous Drain Current (Id) at Tc 47 A —
Maximum Power Dissipation (Pd) at Tc 154 W —
On-Resistance (Rds(on)) [DATA_NEEDED: typical Rds(on) in mohm] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Input Capacitance (Ciss) at Vds=400V 540 pF —
Gambaran Suhu Operasi [DATA_NEEDED: Tj min/max] —
Kemasan PG-HDSOP-16-8 (top-side cooled) —
Jenis Pemasangan Surface Mount Surface Mount
Cooling Configuration Top-side cooled (TOLT) —
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant —
Lead-Free Yes —
Production Wafer Size 200 mm (8 inch) —
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Technology — Trench MOSFET (OptiMOS 3)
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Suhu Hubungan Operasi — -55 C to +175 C
Kemasan / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

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