IPB025N10N3GATMA1 vs IPB020NE7N3GATMA1 Comparison
Detailed side-by-side comparison of IPB025N10N3GATMA1 by Infineon and IPB020NE7N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
IPB025N10N3GATMA1 β ActiveInfineon
IPB020NE7N3GATMA1 - 75V 120A N-Channel MOSFET | Infineon OptiMOS
IPB020NE7N3GATMA1 β ActiveSpecification Comparison
| Parameter | IPB025N10N3GATMA1 | IPB020NE7N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.74 | $2.31 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 75 V |
| Continuous Drain Current (ID) at Tc | 180 A | 120 A |
| Power Dissipation (PD) at Tc | 300 W | 300 W |
| RDS(on) Typical at VGS=10V, ID=100A | 2.5 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V | β |
| Input Capacitance (Ciss) | 2.58 nF | β |
| Gate Charge (Qg) Typical | [DATA_NEEDED: Qg value] | β |
| Package | PG-TO263-7 (D2PAK-7) 6+Tab | PG-TO263-3 (DΒ²PAK, TO-263AB) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | -55C to +175C (junction) |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 N-Channel Power MOSFET |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IPB020NE7N3GATMA1 |
| Polarity | β | N-Channel |
| On-State Resistance RDS(on) | β | 2.0 mΞ© typical (per part number code) |
| Configuration | β | Single |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) min/typ/max] |
| Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Lead-Free | β | Yes |
| Avalanche Rated | β | Yes (per OptiMOS 3 family datasheet) |