IPB025N10N3GATMA1 vs IPB020NE7N3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB025N10N3GATMA1 sa pamamagitan ng Infineon at IPB020NE7N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB020NE7N3GATMA1 IPB020NE7N3GATMA1 - 75V 120A N-Channel MOSFET | Infineon OptiMOS

IPB020NE7N3GATMA1 - 75V 120A N-Channel MOSFET | Infineon OptiMOS

IPB020NE7N3GATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB025N10N3GATMA1 IPB020NE7N3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 75 V
Continuous Drain Current (ID) at Tc 180 A 120 A
Power Dissipation (PD) at Tc 300 W 300 W
RDS(on) Typical at VGS=10V, ID=100A 2.5 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 3.5 V —
Input Capacitance (Ciss) 2.58 nF —
Gate Charge (Qg) Typical [DATA_NEEDED: Qg value] —
Packhaging PG-TO263-7 (D2PAK-7) 6+Tab PG-TO263-3 (D²PAK, TO-263AB)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +175C (junction) -55C to +175C (junction)
Technology OptiMOS 3 trench MOSFET OptiMOS 3 N-Channel Power MOSFET
Level ng MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
Tindminan RoHS Compliant Compliant
Wala sa Halogen Yes —
Manufacturer — Infineon Technologies
Part Number — IPB020NE7N3GATMA1
Polarity — N-Channel
On-State Resistance RDS(on) — 2.0 mΩ typical (per part number code)
Configuration — Single
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) min/typ/max]
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Lead-Free — Yes
Avalanche Rated — Yes (per OptiMOS 3 family datasheet)

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