IPB025N10N3GATMA1 vs IPB020NE7N3GATMA1 Perbandingan
Perbandingan bersamaan detil IPB025N10N3GATMA1 dari Infineon dan IPB020NE7N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
IPB025N10N3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPB025N10N3GATMA1 | IPB020NE7N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 75 V |
| Continuous Drain Current (ID) at Tc | 180 A | 120 A |
| Power Dissipation (PD) at Tc | 300 W | 300 W |
| RDS(on) Typical at VGS=10V, ID=100A | 2.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V | — |
| Input Capacitance (Ciss) | 2.58 nF | — |
| Gate Charge (Qg) Typical | [DATA_NEEDED: Qg value] | — |
| Paket | PG-TO263-7 (D2PAK-7) 6+Tab | PG-TO263-3 (D²PAK, TO-263AB) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C (junction) | -55C to +175C (junction) |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 N-Channel Power MOSFET |
| Level MSL | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Bebas Halogen | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPB020NE7N3GATMA1 |
| Polarity | — | N-Channel |
| On-State Resistance RDS(on) | — | 2.0 mΩ typical (per part number code) |
| Configuration | — | Single |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes (per OptiMOS 3 family datasheet) |