IPB038N12N3GATMA1 vs BSC027N04LSGATMA1 Comparison
Detailed side-by-side comparison of IPB038N12N3GATMA1 by Infineon and BSC027N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC027N04LSGATMA1 - 40V 100A 2.7mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPB038N12N3GATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.78 | $0.54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 120V | OptiMOS 3 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 120 V | β |
| Continuous Drain Current (Id) @ Tc | 120 A | β |
| Power Dissipation (Pd) @ Tc | 300 W | β |
| On-State Resistance (Rds(on)) | 3.8 mOhm (typical) | β |
| Package / Case | PG-TO263-3 (D2PAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | OptiMOS 3 (Trench) |
| Gate Drive | Logic-level compatible | β |
| Operating Temperature Range | -55C to +175C (junction) | -55Β°C to +150Β°C |
| Standard Package Quantity | 1000 (Tape & Reel) | β |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 24 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 2.7 mΞ© |
| Power Dissipation (Ta=25Β°C) | β | 2.5 W |
| Power Dissipation (Tc=25Β°C) | β | 83 W |
| Package | β | PG-TDSON-8-1 (SuperSO8 5x6) |
| MSL Level | β | 1 |
| Halogen-Free | β | Yes |