IPB038N12N3GATMA1 vs BSC027N04LSGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB038N12N3GATMA1 sa pamamagitan ng Infineon at BSC027N04LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB038N12N3GATMA1 IPB038N12N3GATMA1 - 120V 120A 3.8mOhm N-Ch OptiMOS | Infineon

IPB038N12N3GATMA1 - 120V 120A 3.8mOhm N-Ch OptiMOS | Infineon

IPB038N12N3GATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB038N12N3GATMA1 BSC027N04LSGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 120V OptiMOS 3
FET Type N-Channel —
Drain-Source Voltage (Vdss) 120 V —
Continuous Drain Current (Id) @ Tc 120 A —
Power Dissipation (Pd) @ Tc 300 W —
On-State Resistance (Rds(on)) 3.8 mOhm (typical) —
Packhaging / Kaso PG-TO263-3 (D2PAK) —
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS trench MOSFET OptiMOS 3 (Trench)
Gate Drive Logic-level compatible —
Hanay ng Temperature na Operasyon -55C to +175C (junction) -55°C to +150°C
Standard Package Quantity 1000 (Tape & Reel) —
Tindminan RoHS Compliant Compliant
Avalanche Rated Yes —
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at Ta=25°C — 24 A
Continuous Drain Current (ID) at Tc=25°C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 2.7 mΩ
Power Dissipation (Ta=25°C) — 2.5 W
Pwersang Pinahihigpit (TC=25°C) — 83 W
Packhaging — PG-TDSON-8-1 (SuperSO8 5x6)
Level ng MSL — 1
Wala sa Halogen — Yes

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