IPB60R280P7ATMA1 vs IPD60R360P7SAUMA1 Comparison
Detailed side-by-side comparison of IPB60R280P7ATMA1 by Infineon and IPD60R360P7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPB60R280P7ATMA1 | IPD60R360P7SAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | $0.88 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | — |
| Transistor Type | N-Channel MOSFET | — |
| Technology | Superjunction (SJ) | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| Package | PG-TO263-3 (D2PAK) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (2 + Tab) | — |
| Operating Temperature Range | -55 °C to +150 °C (T_j max) | -55C to +150C (junction) |
| Configuration | Single N-Channel | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| Series | — | CoolMOS P7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at TC | — | 9 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 360 mOhm (typ, VGS = 10 V) |
| Power Dissipation (PD) at TC | — | 41 W |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.0 V to 4.5 V (typ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Package / Case | — | PG-TO252-3 (DPAK) |
| Number of Pins | — | 3 |
| MSL Level | — | 1 (per JEDEC J-STD-020) |
| Channel Type | — | N-Channel |