IPB60R280P7ATMA1 vs IPD60R360P7SAUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB60R280P7ATMA1 disebabkan oleh Infineon dan IPD60R360P7SAUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPB60R280P7ATMA1 | IPD60R360P7SAUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $0.88 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | Superjunction (SJ) | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| Kemasan | PG-TO263-3 (D2PAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (2 + Tab) | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C (T_j max) | -55C to +150C (junction) |
| Configuration | Single N-Channel | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| Series | — | CoolMOS P7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at TC | — | 9 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 360 mOhm (typ, VGS = 10 V) |
| Power Dissipation (PD) at TC | — | 41 W |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.0 V to 4.5 V (typ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Kemasan / Case | — | PG-TO252-3 (DPAK) |
| Bilangan Pin | — | 3 |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| Channel Type | — | N-Channel |