IPB60R280P7ATMA1 vs IPD60R360P7SAUMA1 Perbandingan
Perbandingan bersamaan detil IPB60R280P7ATMA1 dari Infineon dan IPD60R360P7SAUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPB60R280P7ATMA1 | IPD60R360P7SAUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | Superjunction (SJ) | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| Paket | PG-TO263-3 (D2PAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (2 + Tab) | — |
| Rentang Suhu Kerja | -55 °C to +150 °C (T_j max) | -55C to +150C (junction) |
| Configuration | Single N-Channel | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| Series | — | CoolMOS P7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at TC | — | 9 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 360 mOhm (typ, VGS = 10 V) |
| Power Dissipation (PD) at TC | — | 41 W |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.0 V to 4.5 V (typ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Paket / Case | — | PG-TO252-3 (DPAK) |
| Jumlah Pin | — | 3 |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Channel Type | — | N-Channel |