IPC100N04S5L1R1ATMA1 vs ISC011N04NM7VATMA1 比較
詳細並排比較 IPC100N04S5L1R1ATMA1 由 Infineon 與 ISC011N04NM7VATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPC100N04S5L1R1ATMA1 - 40V 100A OptiMOS-5 N-Channel MOSFET | Infineon
IPC100N04S5L1R1ATMA1 ✓ 啟用中規格比較
| 參數 | IPC100N04S5L1R1ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | OptiMOS 7 Power-Transistor |
| 電晶體類型 | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC | 100 A | 256 A |
| On-Resistance RDS(on) max | 1.1 mΩ | — |
| Power Dissipation (PD) at TC | 150 W | — |
| Gate Threshold Voltage VGS(th) | Logic Level | — |
| 工作溫度範圍 | -55 °C to +175 °C | -55 °C to +175 °C (TJ) |
| 封裝 | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8 (source-down) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | MSL1 (unlimited floor life, 260 °C peak reflow) | MSL 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% avalanche tested | — |
| RoHS Compliance | Green Product (RoHS compliant) | Compliant (per Infineon product page) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Technology | — | Trench MOSFET, silicon |
| Short-Circuit Withstand | — | Yes (current-limited) |