IPD053N06NATMA1 vs IPC100N04S51R7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD053N06NATMA1 sa pamamagitan ng Infineon at IPC100N04S51R7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD053N06NATMA1 IPD053N06NATMA1 - 60V 45A N-Ch OptiMOS 5 MOSFET | Infineon

IPD053N06NATMA1 - 60V 45A N-Ch OptiMOS 5 MOSFET | Infineon

IPD053N06NATMA1 ✓ Nakahanda
Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD053N06NATMA1 IPC100N04S51R7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 60V —
Transistor Polarity N-Channel —
Drain-Source Voltage (VDS) 60 V —
Gate-Source Voltage (VGS) +/- 20 V —
Continuous Drain Current (ID, Tc) 45 A —
Continuous Drain Current (ID, Ta) 18 A —
On-State Resistance (RDS(on), max) 5.3 mOhm @ VGS=10V —
Power Dissipation (Tc) 83 W —
Power Dissipation (Ta) 3 W —
Packhaging PG-TO252-3 (DPAK-2), Surface Mount PG-TDSON-8-34 (SS08 leadless)
Hanay ng Temperature na Operasyon -55C to +175C (Tj) [DATA_NEEDED: precise operating range min/max from datasheet] —
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant (Green Product)
Technology OptiMOS 5 trench MOSFET —
Series — OptiMOS-5
Uri ng Transistor — N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage VDS — 40 V
Continuous Drain Current ID — 100 A (at TC)
Pulsed Drain Current IDM — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage VGS — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) value]
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation PD — 115 W (at TC)
Thermal Resistance RthJC — 1.3 K/W
Temperature ng Junction na Operasyon — -55 °C to +175 °C
Level ng MSL — MSL1 (260 °C peak reflow)
AEC-Q101 Qualified — Yes
Avalanche Tested — 100% tested
Built-in Body Diode — Yes

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