IPD053N06NATMA1 vs IPC100N04S51R7ATMA1 比較
詳細並排比較 IPD053N06NATMA1 由 Infineon 與 IPC100N04S51R7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD053N06NATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 60V | — |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Gate-Source Voltage (VGS) | +/- 20 V | — |
| Continuous Drain Current (ID, Tc) | 45 A | — |
| Continuous Drain Current (ID, Ta) | 18 A | — |
| On-State Resistance (RDS(on), max) | 5.3 mOhm @ VGS=10V | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| 封裝 | PG-TO252-3 (DPAK-2), Surface Mount | PG-TDSON-8-34 (SS08 leadless) |
| 工作溫度範圍 | -55C to +175C (Tj) [DATA_NEEDED: precise operating range min/max from datasheet] | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant (Green Product) |
| Technology | OptiMOS 5 trench MOSFET | — |
| Series | — | OptiMOS-5 |
| 電晶體類型 | — | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| 工作接面溫度 | — | -55 °C to +175 °C |
| MSL 等級 | — | MSL1 (260 °C peak reflow) |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% tested |
| Built-in Body Diode | — | Yes |