IPD135N03LGATMA1 vs BSC016N06NSATMA1 比較
詳細並排比較 IPD135N03LGATMA1 由 Infineon 與 BSC016N06NSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD135N03LGATMA1 | BSC016N06NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) | 30 A (Tc) | — |
| Power Dissipation (PD) | 31 W (Tc) | — |
| 封裝 / 外殼 | PG-TO252-3 (DPAK), Surface Mount | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Gate Charge (Qg) | Ultra-low (per OptiMOS™ family spec) | — |
| Output Charge (Qoss) | Ultra-low (per OptiMOS™ family spec) | — |
| 工作溫度範圍 | -55°C to +175°C (TJ max typical for OptiMOS) | -55 °C to +150 °C |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free Finish | Yes | — |
| Qualification | Industrial (Infineon OptiMOS™ standard grade) | — |
| Product Series | — | OptiMOS™ 5 60V |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, TA) | — | 30 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.6 mΩ |
| Total Gate Charge (Qg) | — | 71 nC |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 139 W |
| 封裝 | — | PG-TDSON-8 FL (SuperSO8 5x6) |
| Gate Drive (recommended) | — | 10 V |
| Technology | — | OptiMOS™ 5 |