IPD180N10N3GATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IPD180N10N3GATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD180N10N3GATMA1 - 100V 43A 18mΞ© OptiMOS 3 N-MOSFET | Infineon
IPD180N10N3GATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IPD180N10N3GATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD180N10N3GATMA1 | β |
| Technology | OptiMOSβ’ 3 (N-channel power MOSFET) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 43 A | β |
| Power Dissipation (Ptot, Tc=25Β°C) | 71 W | β |
| On-Resistance RDS(on) max @ VGS=10V | 18 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg typical value] | β |
| Package | PG-TO252-3 (DPAK, SC-63) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +175Β°C (Tj max 175Β°C) | β |
| Configuration | Single N-channel MOSFET | Dual N-Channel (independent MOSFETs) |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| MSL Level | 1 (per Infineon package rating) | β |
| Halogen-Free | Yes (per Infineon OptiMOS 3 datasheet family) | β |
| Series | β | OptiMOS 3 |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |