IPD180N10N3GATMA1 vs BSC076N04NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD180N10N3GATMA1 disebabkan oleh Infineon dan BSC076N04NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD180N10N3GATMA1 BSC076N04NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD180N10N3GATMA1 —
Technology OptiMOS™ 3 (N-channel power MOSFET) Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc=25°C) 43 A —
Power Dissipation (Ptot, Tc=25°C) 71 W —
On-Resistance RDS(on) max @ VGS=10V 18 mΩ —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical value] —
Gate Charge Qg typ @ VGS=10V [DATA_NEEDED: Qg typical value] —
Kemasan PG-TO252-3 (DPAK, SC-63) —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +175°C (Tj max 175°C) —
Configuration Single N-channel MOSFET Dual N-Channel (independent MOSFETs)
Status RoHS Compliant —
Lead-Free Yes —
Aras MSL 1 (per Infineon package rating) —
Boson Bebas Yes (per Infineon OptiMOS 3 datasheet family) —
Series — OptiMOS 3
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Suhu Hubungan Operasi — -55 C to +175 C
Kemasan / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

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