IPD180N10N3GATMA1 vs BSC076N04NDATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD180N10N3GATMA1 sa pamamagitan ng Infineon at BSC076N04NDATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD180N10N3GATMA1 - 100V 43A 18mΩ OptiMOS 3 N-MOSFET | Infineon
IPD180N10N3GATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPD180N10N3GATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD180N10N3GATMA1 | — |
| Technology | OptiMOS™ 3 (N-channel power MOSFET) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 43 A | — |
| Power Dissipation (Ptot, Tc=25°C) | 71 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 18 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg typical value] | — |
| Packhaging | PG-TO252-3 (DPAK, SC-63) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55°C to +175°C (Tj max 175°C) | — |
| Configuration | Single N-channel MOSFET | Dual N-Channel (independent MOSFETs) |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Level ng MSL | 1 (per Infineon package rating) | — |
| Wala sa Halogen | Yes (per Infineon OptiMOS 3 datasheet family) | — |
| Series | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Packhaging / Kaso | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |