IPD60N10S412ATMA1 vs BSC019N04LSTATMA1 Comparison
Detailed side-by-side comparison of IPD60N10S412ATMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD60N10S412ATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD60N10S412ATMA1 | — |
| Transistor Type | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID, TC=25C) | 60 A | — |
| Power Dissipation (PD, TC=25C) | 94 W | — |
| RDS(on) Max @ VGS=10V | 12.2 mOhm | — |
| Operating Junction Temperature | -55 C to +175 C | — |
| Package | PG-TO252-3-313 (DPAK) | TDSON-8 (SuperSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (2 + Tab) | — |
| MSL Level | MSL1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Peak Reflow Temperature | 260 C | — |
| AEC-Q101 Qualification | Qualified (Automotive Grade) | — |
| RoHS Status | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% Avalanche Tested | — |
| Halogen Free | Yes (per Infineon definition) | — |
| Technology | — | OptiMOS 5 (N-channel trench MOSFET) |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| Operating Temperature Range | — | -55 C to +150 C |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |