IPD60N10S412ATMA1 vs BSC019N04LSTATMA1 比較
詳細並排比較 IPD60N10S412ATMA1 由 Infineon 與 BSC019N04LSTATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD60N10S412ATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD60N10S412ATMA1 | — |
| 電晶體類型 | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID, TC=25C) | 60 A | — |
| Power Dissipation (PD, TC=25C) | 94 W | — |
| RDS(on) Max @ VGS=10V | 12.2 mOhm | — |
| 工作接面溫度 | -55 C to +175 C | — |
| 封裝 | PG-TO252-3-313 (DPAK) | TDSON-8 (SuperSO8) 5x6 mm |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (2 + Tab) | — |
| MSL 等級 | MSL1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Peak Reflow Temperature | 260 C | — |
| AEC-Q101 Qualification | Qualified (Automotive Grade) | — |
| RoHS 狀態 | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% Avalanche Tested | — |
| 無鹵素 | Yes (per Infineon definition) | — |
| Technology | — | OptiMOS 5 (N-channel trench MOSFET) |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| 工作溫度範圍 | — | -55 C to +150 C |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |