IPD60N10S412ATMA1 vs BSC019N04LSTATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60N10S412ATMA1 disebabkan oleh Infineon dan BSC019N04LSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD60N10S412ATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD60N10S412ATMA1 | — |
| Jenis Transistor | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID, TC=25C) | 60 A | — |
| Power Dissipation (PD, TC=25C) | 94 W | — |
| RDS(on) Max @ VGS=10V | 12.2 mOhm | — |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Kemasan | PG-TO252-3-313 (DPAK) | TDSON-8 (SuperSO8) 5x6 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (2 + Tab) | — |
| Aras MSL | MSL1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Peak Reflow Temperature | 260 C | — |
| AEC-Q101 Qualification | Qualified (Automotive Grade) | — |
| Status RoHS | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% Avalanche Tested | — |
| Boson Bebas | Yes (per Infineon definition) | — |
| Technology | — | OptiMOS 5 (N-channel trench MOSFET) |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| Gambaran Suhu Operasi | — | -55 C to +150 C |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |