IPD60R180P7ATMA1 vs IAUC60N04S6L030HATMA1 比較

詳細並排比較 IPD60R180P7ATMA1 由 Infineon 與 IAUC60N04S6L030HATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD60R180P7ATMA1 IPD60R180P7ATMA1 - 600V 180mOhm CoolMOS P7 MOSFET | Infineon

IPD60R180P7ATMA1 - 600V 180mOhm CoolMOS P7 MOSFET | Infineon

IPD60R180P7ATMA1 ✓ 啟用中
Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ 啟用中

規格比較

參數 IPD60R180P7ATMA1 IAUC60N04S6L030HATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 —
Technology Superjunction (SJ) N-channel MOSFET —
Drain-Source Voltage (VDS) 600 V 40 V
Continuous Drain Current (ID) at TC=25C 18 A —
On-Resistance RDS(on) max at VGS=10V 180 mOhm —
Gate-Source Voltage (VGS) max +/-20 V —
Total Power Dissipation (PD) at TC=25C 72 W —
工作接面溫度 -55C to +150C -55 C to +175 C
封裝 PG-TO252-3 (DPAK) PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (unlimited) 1 (per JEDEC J-STD-020)
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
Shipping Package Tape and Reel (ATMA1 suffix) —
Part Series — OptiMOS 6
Configuration — Half-Bridge (2 N-Channel)
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Gate Threshold Voltage (VGS(th)) — 2 V
Maximum Power Dissipation (PD) at TC — 75 W
Automotive Qualification — AEC-Q101 (per part number suffix)

資料表與資源

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