IPD60R385CPATMA1 vs IPB60R165CPATMA1 Comparison

Detailed side-by-side comparison of IPD60R385CPATMA1 by Infineon and IPB60R165CPATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60R385CPATMA1 IPB60R165CPATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $1.78
Manufacturer Infineon Technologies
Series CoolMOS™ CP (5th generation)
FET Type N-Channel
Drain-Source Voltage (V(BR)DSS) 600 V
Drain-Source On-Resistance (RDS(on)) 385 mΩ (typ, VGS = 10 V)
Continuous Drain Current (ID) at TC=25°C 9 A
Pulsed Drain Current (IDM) 27 A
Power Dissipation (PD) at TC=25°C 83 W
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) 18 nC (typ)
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss]
Operating Junction Temperature -55 °C to +150 °C
Package / Case PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source; tab = Drain)
RoHS Status Compliant Compliant (Pb-free lead plating)
MSL Level 1 (per JEDEC J-STD-020)
Technology CoolMOS CP (superjunction, N-Channel)
Drain-Source Voltage (VDS) 600 V
Continuous Drain Current (ID, Tc=25°C) 21 A
Power Dissipation (PD, Tc=25°C) 192 W
On-Resistance RDS(on), max (VGS=10V) 165 mΩ
Gate-Source Voltage (VGS) ±20 V
Gate Threshold Voltage (VGS(th), typ) 3.5 V
Total Gate Charge (Qg, typ) [DATA_NEEDED: Qg typical value]
Operating Temperature Range (TJ) -55°C to +150°C
Package PG-TO263-3-2 (D2PAK-2)
JEDEC Qualification Qualified per JEDEC for target applications
dv/dt Ruggedness Extreme dv/dt rated
Polarity / Channel N-Channel

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