IPD60R600P6ATMA1 vs IPD80R600P7ATMA1 比較
詳細並排比較 IPD60R600P6ATMA1 由 Infineon 與 IPD80R600P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD60R600P6ATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | CoolMOS P6 (superjunction N-channel MOSFET) | CoolMOS P7 super-junction |
| Drain-Source Voltage (Vds) | 600 V | — |
| Continuous Drain Current (Id, Tc) | 7.3 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulse value] | — |
| On-State Resistance Rds(on) | 540 mOhm (typ, per Infineon product page) | — |
| Power Dissipation (Pd, Tc) | 63 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Body Diode Reverse Recovery | Fast recovery (CoolMOS P6 family characteristic) | — |
| 工作接面溫度 | -40C to +150C | — |
| 封裝 | PG-TO252-3 (DPAK) surface mount | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant (per Infineon product page) | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Application Family | PFC stages, hard/soft switching PWM, resonant converters, PC Silverbox, adapter, LCD/PDP TV, lighting, server, telecom, UPS | — |
| Series | CoolMOS P6 industrial grade | — |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID, Tc) | — | 8 A |
| Pulsed Drain Current (IDM) | — | 22 A |
| On-Resistance (RDS(on), max) | — | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | — | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | — | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | — | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | — | 0.17 mJ |
| 工作溫度範圍 | — | -55 C to +150 C |
| Polarity | — | N-Channel |