IPD70N10S3L12ATMA2 - 100V N-Ch OptiMOS 11.5mOhm 70A | Infineon
MPN: IPD70N10S3L12ATMA2 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.12 | $560.00 |
| 1,000 | $0.97 | $970.00 |
| 2,500 | $0.86 | $2,150.00 |
IPD70N10S3L12ATMA2 Overview
An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-to-source voltage inverts the surface of an n-type epitaxial layer to create a conducting channel between drain and source. The OptiMOS-T family specifically targets low-voltage and mid-voltage synchronous rectification, motor control, and DC-DC converter applications. Within the broader taxonomy, this part belongs to: MOSFET -> discrete semiconductor -> power transistor -> semiconductor device. The 11.5 mOhm figure quoted at V_GS = 10 V is typical; gate-drive headroom of 10 V is therefore recommended to realize the lowest conduction loss.
Key features include 100 V drain-source breakdown voltage, 70 A continuous drain current at TC, 125 W maximum power dissipation at TC, and a typical R_DS(on) of 11.5 mOhm at V_GS = 10 V. The PG-TO252-3-11 (DPAK) package provides a drain-tab thermal pad that can be soldered directly to a PCB copper pour for low thermal resistance, enabling compact high-current designs without an external heatsink at moderate duty cycles.
The device uses Infineon's OptiMOS-T trench technology, which reduces on-state resistance per unit silicon area and improves switching figure-of-merit relative to previous planar generations. The low R_DS(on) x Qg product supports high-frequency switching with reduced gate-drive losses, while the avalanche-rated body diode permits reliable operation in half-bridge and synchronous rectifier topologies with proper dead-time management.
Typical applications include 48 V DC-DC converters, high-current synchronous rectification in telecom and server power supplies, motor-drive H-bridges, battery management load switches, and industrial inverters. The combination of 100 V rating and 11.5 mOhm on-state resistance makes the device a particularly efficient choice for 48 V bus architectures where minimizing conduction loss is critical.
When designing with this MOSFET, prioritize a low-inductance gate-drive loop and a Kelvin-source connection when available to suppress gate-oscillation and maximize switching speed. The exposed drain tab must be soldered to a copper area of at least 1 square inch for sustained high-current operation, otherwise thermal performance degrades sharply.
This page synthesizes distributor pricing, drop-in alternatives from the OptiMOS-T family and key competitors, and practical design notes not consolidated in the manufacturer datasheet.
Drop-in alternatives for IPD70N10S3L12ATMA2 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD70N10S3L12ATMA2 (same form factor and footprint) β differing in Drain-Source Voltage (VDS), Technology, Package, Operating Junction Temperature, Part Number.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPD90N10S4L-12
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IPD70N10S3-12
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IPB70N10S3L-12
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
ISC045N03L5SATMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$0.51 / Unit
View Datasheet βNTD6416AN
β Drop-Inπ Reference alternative (not in catalog)
IPD50N06S409ATMA2
β Drop-Inβ In Stock
$0.49 / Unit
View Datasheet βIPD70N10S3L12ATMA2 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPD70N10S3L12ATMA2 |
| Technology | OptiMOS-T (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC | 70 A |
| On-State Resistance R_DS(on) typ @ VGS=10V | 11.5 mOhm |
| Power Dissipation PD at TC | 125 W |
| Operating Junction Temperature | -55 C to +175 C |
| Package | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
IPD70N10S3L12ATMA2 Pin Configuration
| Pin 1 | Gate β MOSFET gate control input |
| Pin 2 | Drain β MOSFET drain (connected to tab) |
| Pin 3 | Source β MOSFET source |
| Pin Tab | Drain β Drain tab (electrically connected to pin 2, thermal pad) |
Safe Operating Area (DC)
Typical Applications
IPD70N10S3L12ATMA2 is suitable for 6 applications: 48V DC-DC Converter, Synchronous Rectification in SMPS, Motor Drive H-Bridge, Battery Management Load Switch, Solar Inverter Power Stage, Industrial Solenoid/Relay Driver.
48V DC-DC Converter
The IPD70N10S3L12ATMA2 fits 48V telecom and e-mobility DC-DC converter primary-side switching with its 100V VDS rating providing safe headroom above a 48V nominal bus plus inductive transients. Its 11.5 mOhm typical R_DS(on) at V_GS=10V keeps full-load conduction loss around 56W at 70A, manageable with 1 square inch of copper on the drain tab. The OptiMOS-T switching figure-of-merit supports 100-200 kHz operation, enabling compact magnetic designs while the 125W TC power dissipation handles sustained industrial workloads.
Recommended
Synchronous Rectification in SMPS
In secondary-side synchronous rectification of 48V-input isolated SMPS, the IPD70N10S3L12ATMA2's 100V rating handles the reflected primary voltage with margin while its 11.5 mOhm R_DS(on) dramatically outperforms Schottky diode drops. Driving V_GS to 10V at 100-300 kHz reduces rectifier loss to a fraction of diode conduction loss, improving overall efficiency by 2-4%. The body diode is avalanche-rated, tolerating transient reverse recovery during dead-time transitions without derating.
Recommended
Motor Drive H-Bridge
The IPD70N10S3L12ATMA2 is well-suited for industrial motor-drive H-bridge legs driving 48V BLDC or stepper motors in 5-10A continuous operation. Its 100V VDS easily tolerates the inductive flyback from motor windings with proper snubbing, while 70A peak handles inrush and stall currents. Paralleling two devices per leg doubles current capacity for higher-power servos. OptiMOS-T trench technology provides the rugged body diode required for unidirectional current decay without external freewheeling diodes in most cases.
Recommended
Battery Management Load Switch
In 48V battery management systems, the IPD70N10S3L12ATMA2 functions as a high-side load disconnect or pre-charge switch with its 100V VDS comfortably above 48V nominal plus transients. The 11.5 mOhm R_DS(on) minimizes voltage drop during normal operation, preserving battery runtime and reducing heat generation in the disconnect path. Driven by a low-current gate driver, it can switch in microseconds for fast overcurrent protection, with the 70A rating covering peak inrush during capacitor bank charging.
Recommended
Solar Inverter Power Stage
The IPD70N10S3L12ATMA2 serves in small residential or commercial solar inverter boost/PFC stages handling 48-80V DC bus rails from panel strings. Its 100V VDS tolerates MPPT voltage transients while the 11.5 mOhm R_DS(on) keeps switching loss low at 50-100 kHz PFC frequencies. The OptiMOS-T technology supports bidirectional current flow needed for synchronous rectification in totem-pole PFC, replacing slower diode bridges. Industrial-grade temperature range to 175C junction handles rooftop thermal stress.
Recommended
Industrial Solenoid/Relay Driver
For industrial solenoid, relay, or valve driver outputs in 24-48V systems, the IPD70N10S3L12ATMA2 provides robust low-side switching with 70A peak handling inductive inrush. The 100V VDS tolerates the inductive flyback when paired with a flyback diode or TVS clamp, eliminating the need for bulky discrete snubbers in many designs. Surface-mount DPAK allows compact multi-channel driver boards while the rugged OptiMOS-T die handles repeated switching cycles in demanding factory automation environments.
Recommended
Recommended Products Summary
Engineering reference data for IPD70N10S3L12ATMA2 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD90N10S4L-12 | IPD70N10S3-12 | IPB70N10S3L-12 | ISC045N03L5SATMA1 | NTD6416AN | IPD50N06S409ATMA2 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi | Infineon |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| VDS max (V) | 100 | 100 | 100 | 100 | 30 | 100 | 60 |
| Continuous ID at TC (A) | 70 | 90 | 70 | 70 | 45 | 64 | 50 |
| R_DS(on) typ @ 10V (mOhm) | 11.5 | 9.0 | 11.5 | 11.5 | 4.5 | 18.0 | 4.0 |
| Technology | OptiMOS-T (Trench N-ch) | OptiMOS-T | OptiMOS-T | OptiMOS-T | OptiMOS 5 | Trench N-ch | OptiMOS-T |
Key Differentiators
- OptiMOS-T technology delivers lower R_DS(on) x Qg figure-of-merit than older planar MOSFETs (vs NTD6416AN)
- Pin-to-pin drop-in compatibility with Infineon performance-upgrade parts (vs IPD90N10S4L-12)
- 100V VDS provides safety margin for 48V automotive and telecom bus rails (vs IPD50N06S409ATMA2)
Design Notes
Estimated: at 70A continuous and R_DS(on)=11.5 mOhm, conduction loss is P = I^2 * R = 70^2 * 0.0115 = ~56 W. The PG-TO252-3-11 (DPAK) package typically has theta_JA around 50 C/W on 1 sq inch of 2 oz copper, giving ~2800 C junction temperature rise above ambient - clearly not sustainable. To approach 70A continuous, attach the tab to a substantial copper pour (>= 3 sq inches) or add an external heatsink, targeting theta_JA below 2 C/W. At realistic 10-20A operation, no heatsink is needed beyond the copper pour.
Layout the gate-drive loop as small as possible: place the gate resistor and gate-driver output within 5 mm of the gate pin, with the return path directly over the source lead. Use a Kelvin-source connection if the package exposes a fourth source sense pin, otherwise minimize the source-inductance loop area. The drain tab must be soldered to a continuous copper pour with thermal vias to inner layers; recommend at least 4-9 thermal vias of 0.3 mm diameter under the tab to spread heat into the board.
Driving the gate below 10V (e.g. directly from a 3.3V MCU GPIO) leaves the channel partially enhanced and R_DS(on) increases dramatically - at V_GS=4.5V the on-state resistance is roughly 2-3x the 10V figure, tripling conduction loss. Use a dedicated gate driver (e.g. 1EDN7116GXTMA1 or IR2109SPBF) capable of 10V swing. Also avoid exceeding the absolute maximum V_GS rating (typically +/- 20V); add a 10V Zener from gate to source if the gate is exposed to inductive ringing.
When using the IPD70N10S3L12ATMA2 in a synchronous rectifier position, account for body-diode reverse recovery. OptiMOS-T has a fast but not infinitely fast body diode; if the application switches at >200 kHz or has very low dead-time, add an external Schottky anti-parallel diode or use the device with a controlled dead-time of 50-100 ns. In half-bridge configurations, keep the high-side and low-side source connections short to minimize inductive ringing during switching.
Compliance Information
RoHS compliant per Newark listing. Industrial-grade only - not AEC-Q100 qualified; for automotive applications use IPB70N10S3L-12 G variant or IPD90N10S4L-12 automotive part.
