IPN60R360P7SATMA1 vs BSC076N04NDATMA1 比較
詳細並排比較 IPN60R360P7SATMA1 由 Infineon 與 BSC076N04NDATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPN60R360P7SATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | OptiMOS 3 |
| Technology | Superjunction (SJ) N-Channel MOSFET | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-Resistance RDS(on) max | 360 mΩ | 7.6 mOhm |
| Continuous Drain Current (ID) at TC=25°C | 9 A | — |
| Continuous Drain Current (ID) at TA=25°C | [DATA_NEEDED: ID at TA=25°C with standard PCB] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TC=25°C | 7 W | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 4 V (max, typical) |
| Total Gate Charge (QG) | [DATA_NEEDED: QG typical at VGS=10V] | — |
| 工作溫度範圍 | -55°C to +150°C (TJ) | — |
| 封裝 | PG-SOT223 (Surface Mount) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| ESD Protection | Yes (integrated cell) | — |
| 無鹵素 | Yes (per Infineon datasheet) | — |
| RoHS Compliance | Compliant | — |
| 腳位數 | 3 functional + tab (PG-SOT223) | — |
| Body Diode | Integrated, fast-recovery | — |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| 工作接面溫度 | — | -55 C to +175 C |
| 封裝 / 外殼 | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |