IPN60R360P7SATMA1 vs BSC076N04NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPN60R360P7SATMA1 disebabkan oleh Infineon dan BSC076N04NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPN60R360P7SATMA1 BSC076N04NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 OptiMOS 3
Technology Superjunction (SJ) N-Channel MOSFET Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 600 V —
On-Resistance RDS(on) max 360 mΩ 7.6 mOhm
Continuous Drain Current (ID) at TC=25°C 9 A —
Continuous Drain Current (ID) at TA=25°C [DATA_NEEDED: ID at TA=25°C with standard PCB] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TC=25°C 7 W —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 4 V (max, typical)
Total Gate Charge (QG) [DATA_NEEDED: QG typical at VGS=10V] —
Gambaran Suhu Operasi -55°C to +150°C (TJ) —
Kemasan PG-SOT223 (Surface Mount) —
Jenis Pemasangan Surface Mount Surface Mount
ESD Protection Yes (integrated cell) —
Boson Bebas Yes (per Infineon datasheet) —
RoHS Compliance Compliant —
Kiraan Pin 3 functional + tab (PG-SOT223) —
Body Diode Integrated, fast-recovery —
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Suhu Hubungan Operasi — -55 C to +175 C
Kemasan / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga