IPN60R360P7SATMA1 vs BSC076N04NDATMA1 Perbandingan

Perbandingan bersamaan detil IPN60R360P7SATMA1 dari Infineon dan BSC076N04NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPN60R360P7SATMA1 BSC076N04NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 OptiMOS 3
Technology Superjunction (SJ) N-Channel MOSFET Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 600 V —
On-Resistance RDS(on) max 360 mΩ 7.6 mOhm
Continuous Drain Current (ID) at TC=25°C 9 A —
Continuous Drain Current (ID) at TA=25°C [DATA_NEEDED: ID at TA=25°C with standard PCB] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TC=25°C 7 W —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 4 V (max, typical)
Total Gate Charge (QG) [DATA_NEEDED: QG typical at VGS=10V] —
Rentang Suhu Kerja -55°C to +150°C (TJ) —
Paket PG-SOT223 (Surface Mount) —
Tipe Mounting Surface Mount Surface Mount
ESD Protection Yes (integrated cell) —
Bebas Halogen Yes (per Infineon datasheet) —
RoHS Compliance Compliant —
Jumlah Pin 3 functional + tab (PG-SOT223) —
Body Diode Integrated, fast-recovery —
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Suhu Hubung Kerja — -55 C to +175 C
Paket / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

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