IPN80R4K5P7ATMA1 vs IPN95R3K7P7ATMA1 Comparison

Detailed side-by-side comparison of IPN80R4K5P7ATMA1 by Infineon and IPN95R3K7P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPN80R4K5P7ATMA1

IPN80R4K5P7ATMA1 - 800V 1.5A CoolMOS P7 N-Channel MOSFET | Infineon

IPN80R4K5P7ATMA1 βœ“ Active
Infineon
IPN95R3K7P7ATMA1

IPN95R3K7P7ATMA1 - 950V CoolMOS P7 N-MOSFET 2A SOT-223 | Infineon

IPN95R3K7P7ATMA1 βœ“ Active

Specification Comparison

Parameter IPN80R4K5P7ATMA1 IPN95R3K7P7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.30 $0.44
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 800 V 950 V
Continuous Drain Current (ID, Tc) 1.5 A β€”
Power Dissipation (Pd, Tc) 6 W β€”
On-Resistance (RDS(on), VGS=10V) 4.5 ohm max β€”
Package PG-SOT223 (surface mount, 3-pin + tab) PG-SOT223 (3-pin + tab, surface mount)
Mounting Type Surface Mount Surface Mount
Technology CoolMOS Superjunction (SJ) Super-junction (CoolMOS P7)
Operating Mode Enhancement-mode β€”
Grade Industrial β€”
Application Low-power SMPS, flyback converters, LED drivers β€”
RoHS Status Compliant Compliant
Reel / Tape Packaging Tape & Reel (T/R) β€”
Series β€” CoolMOS P7
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Tc β€” 2.0 A
Power Dissipation (Pd) at Tc β€” 6 W
On-State Resistance (RDS(on)) max β€” 3700 mOhm
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ β€” [DATA_NEEDED: VGS(th) typ]
Operating Junction Temperature β€” -55 C to +150 C
Lead-Free β€” Yes
MSL Level β€” [DATA_NEEDED: MSL rating]

Datasheets & Resources

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