IPN80R4K5P7ATMA1 vs IPN95R3K7P7ATMA1 Perbandingan

Perbandingan bersamaan detil IPN80R4K5P7ATMA1 dari Infineon dan IPN95R3K7P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPN80R4K5P7ATMA1 IPN95R3K7P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 800 V 950 V
Continuous Drain Current (ID, Tc) 1.5 A —
Power Dissipation (Pd, Tc) 6 W —
On-Resistance (RDS(on), VGS=10V) 4.5 ohm max —
Paket PG-SOT223 (surface mount, 3-pin + tab) PG-SOT223 (3-pin + tab, surface mount)
Tipe Mounting Surface Mount Surface Mount
Technology CoolMOS Superjunction (SJ) Super-junction (CoolMOS P7)
Operating Mode Enhancement-mode —
Grade Industrial —
Application Low-power SMPS, flyback converters, LED drivers —
Status RoHS Compliant Compliant
Reel / Tape Packaging Tape & Reel (T/R) —
Series — CoolMOS P7
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 2.0 A
Power Dissipation (Pd) at Tc — 6 W
On-State Resistance (RDS(on)) max — 3700 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typ]
Suhu Hubung Kerja — -55 C to +150 C
Lead-Free — Yes
Level MSL — [DATA_NEEDED: MSL rating]

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