IPN95R3K7P7ATMA1 vs BSC076N06NS3GATMA1 Comparison

Detailed side-by-side comparison of IPN95R3K7P7ATMA1 by Infineon and BSC076N06NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPN95R3K7P7ATMA1

IPN95R3K7P7ATMA1 - 950V CoolMOS P7 N-MOSFET 2A SOT-223 | Infineon

IPN95R3K7P7ATMA1 βœ“ Active

Specification Comparison

Parameter IPN95R3K7P7ATMA1 BSC076N06NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.44 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 950 V 60 V
Continuous Drain Current (ID) at Tc 2.0 A β€”
Power Dissipation (Pd) at Tc 6 W β€”
On-State Resistance (RDS(on)) max 3700 mOhm β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] Β±20 V
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typ] β€”
Technology Super-junction (CoolMOS P7) N-Channel Trench MOSFET
Package PG-SOT223 (3-pin + tab, surface mount) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55 C to +150 C β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
MSL Level [DATA_NEEDED: MSL rating] 1 (unlimited)
Product Family β€” OptiMOS 3
Continuous Drain Current (ID) at TC=25C β€” 50 A
On-Resistance RDS(on) max at VGS=10V β€” 7.6 mΞ©
On-Resistance RDS(on) max at VGS=4.5V β€” 10.4 mΞ©
Gate Threshold Voltage (VGS(th)) β€” 2.0 V to 3.5 V
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 69 W
Operating Temperature Range β€” -55C to +150C
RoHS Compliance β€” Compliant
Halogen-Free β€” Yes (per Infineon product page)

Datasheets & Resources

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