IPN95R3K7P7ATMA1 vs BSC076N06NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPN95R3K7P7ATMA1 disebabkan oleh Infineon dan BSC076N06NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPN95R3K7P7ATMA1 BSC076N06NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 950 V 60 V
Continuous Drain Current (ID) at Tc 2.0 A —
Power Dissipation (Pd) at Tc 6 W —
On-State Resistance (RDS(on)) max 3700 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] ±20 V
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typ] —
Technology Super-junction (CoolMOS P7) N-Channel Trench MOSFET
Kemasan PG-SOT223 (3-pin + tab, surface mount) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Hubungan Operasi -55 C to +150 C —
Status RoHS Compliant —
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL rating] 1 (unlimited)
Product Family — OptiMOS 3
Continuous Drain Current (ID) at TC=25C — 50 A
On-Resistance RDS(on) max at VGS=10V — 7.6 mΩ
On-Resistance RDS(on) max at VGS=4.5V — 10.4 mΩ
Gate Threshold Voltage (VGS(th)) — 2.0 V to 3.5 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
Gambaran Suhu Operasi — -55C to +150C
RoHS Compliance — Compliant
Boson Bebas — Yes (per Infineon product page)

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