IPN95R3K7P7ATMA1 vs BSC076N06NS3GATMA1 Perbandingan

Perbandingan bersamaan detil IPN95R3K7P7ATMA1 dari Infineon dan BSC076N06NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPN95R3K7P7ATMA1 BSC076N06NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 950 V 60 V
Continuous Drain Current (ID) at Tc 2.0 A —
Power Dissipation (Pd) at Tc 6 W —
On-State Resistance (RDS(on)) max 3700 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] ±20 V
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typ] —
Technology Super-junction (CoolMOS P7) N-Channel Trench MOSFET
Paket PG-SOT223 (3-pin + tab, surface mount) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55 C to +150 C —
Status RoHS Compliant —
Lead-Free Yes —
Level MSL [DATA_NEEDED: MSL rating] 1 (unlimited)
Product Family — OptiMOS 3
Continuous Drain Current (ID) at TC=25C — 50 A
On-Resistance RDS(on) max at VGS=10V — 7.6 mΩ
On-Resistance RDS(on) max at VGS=4.5V — 10.4 mΩ
Gate Threshold Voltage (VGS(th)) — 2.0 V to 3.5 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
Rentang Suhu Kerja — -55C to +150C
RoHS Compliance — Compliant
Bebas Halogen — Yes (per Infineon product page)

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