IPN95R3K7P7ATMA1 vs IPN60R2K0PFD7SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPN95R3K7P7ATMA1 disebabkan oleh Infineon dan IPN60R2K0PFD7SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPN95R3K7P7ATMA1 | IPN60R2K0PFD7SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 950 V | — |
| Continuous Drain Current (ID) at Tc | 2.0 A | — |
| Power Dissipation (Pd) at Tc | 6 W | — |
| On-State Resistance (RDS(on)) max | 3700 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Technology | Super-junction (CoolMOS P7) | CoolMOS superjunction |
| Kemasan | PG-SOT223 (3-pin + tab, surface mount) | PG-SOT223-3-1 (SOT-223) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Hubungan Operasi | -55 C to +150 C | — |
| Status RoHS | Compliant | Compliant (per Newark listing) |
| Lead-Free | Yes | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Product Series | — | CoolMOS PFD7 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 600 V |
| Continuous Drain Current (Tc) | — | 3 A |
| Power Dissipation (Tc) | — | 6 W |
| RDS(on) typical @ VGS=10V | — | 2.0 Ohm |
| RDS(on) max @ VGS=10V | — | 1.626 Ohm (per Infineon product page) |
| Gate Threshold Voltage (VGS(th)) | — | 3.8 nC @ 10 V (per UTMel listing) |
| Input Capacitance (Ciss) | — | 134 pF @ 400 V (per UTMel listing) |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |