IPP037N08N3GXKSA1 vs IPP075N15N3GXKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP037N08N3GXKSA1 disebabkan oleh Infineon dan IPP075N15N3GXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPP037N08N3GXKSA1 | IPP075N15N3GXKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) - OptiMOS™ 3 | N-Channel MOSFET (OptiMOS 3) |
| Drain to Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 100 A | — |
| RDS(on) Max @ VGS=10V | 3.75 mΩ | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 6 V, 10 V | — |
| Power Dissipation (Pd) @ Tc=25°C | 214 W | — |
| Kemasan | PG-TO220-3 (Through Hole) | PG-TO220-3 (TO-220 through-hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Kiraan Pin | 3 | — |
| Gambaran Suhu Operasi | -55°C to +175°C (junction) | [DATA_NEEDED: junction operating temperature range] |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ @ VGS=10V] | [DATA_NEEDED: total gate charge] |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | — |
| Status RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Power Dissipation (PD, Tc=25C) | — | 300 W |
| On-State Resistance (RDS(on) max, VGS=10V) | — | 7.5 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage absolute max] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Lead-Free / RoHS | — | RoHS Compliant |
| Ordering Code Suffix | — | GXKSA1 (Tube pack, RoHS compliant) |