IPP075N15N3GXKSA1 vs IPB100N12S305ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP075N15N3GXKSA1 disebabkan oleh Infineon dan IPB100N12S305ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPP075N15N3GXKSA1 IPB100N12S305ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel MOSFET (OptiMOS 3) —
Drain-Source Voltage (VDS) 150 V 120 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
Kemasan PG-TO220-3 (TO-220 through-hole) —
Jenis Pemasangan Through Hole Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: junction operating temperature range] -55 °C to +175 °C (TJ)
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
Series — OptiMOS 5 120V
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 100 A
Power Dissipation (PD) at Tc — 300 W
Drain-Source On-Resistance RDS(on) — 0.0048 ohm (4.8 mΩ) at VGS=10 V
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Maximum Junction Temperature — 175 °C
Avalanche Energy (EAS) — 1445 mJ
Kemasan / Case — PG-TO263-3-2 (D2PAK)
Automotive Qualification — AEC-Q101 qualified
Status RoHS — Compliant
Aras MSL — [DATA_NEEDED: MSL rating]

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