IPP075N15N3GXKSA1 vs IPB100N12S305ATMA2 比較
詳細並排比較 IPP075N15N3GXKSA1 由 Infineon 與 IPB100N12S305ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPP075N15N3GXKSA1 | IPB100N12S305ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel MOSFET (OptiMOS 3) | — |
| Drain-Source Voltage (VDS) | 150 V | 120 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Power Dissipation (PD, Tc=25C) | 300 W | — |
| On-State Resistance (RDS(on) max, VGS=10V) | 7.5 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage absolute max] | — |
| 封裝 | PG-TO220-3 (TO-220 through-hole) | — |
| 安裝類型 | Through Hole | Surface Mount |
| 工作溫度範圍 | [DATA_NEEDED: junction operating temperature range] | -55 °C to +175 °C (TJ) |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | RoHS Compliant | — |
| Ordering Code Suffix | GXKSA1 (Tube pack, RoHS compliant) | — |
| Series | — | OptiMOS 5 120V |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Power Dissipation (PD) at Tc | — | 300 W |
| Drain-Source On-Resistance RDS(on) | — | 0.0048 ohm (4.8 mΩ) at VGS=10 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Maximum Junction Temperature | — | 175 °C |
| Avalanche Energy (EAS) | — | 1445 mJ |
| 封裝 / 外殼 | — | PG-TO263-3-2 (D2PAK) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS 狀態 | — | Compliant |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |