IPP075N15N3GXKSA1 vs IPP037N08N3GXKSA1 Comparison
Detailed side-by-side comparison of IPP075N15N3GXKSA1 by Infineon and IPP037N08N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPP075N15N3GXKSA1 | IPP037N08N3GXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel MOSFET (OptiMOS 3) | MOSFET (Metal Oxide) - OptiMOS™ 3 |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Power Dissipation (PD, Tc=25C) | 300 W | — |
| On-State Resistance (RDS(on) max, VGS=10V) | 7.5 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage absolute max] | — |
| Package | PG-TO220-3 (TO-220 through-hole) | PG-TO220-3 (Through Hole) |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature Range | [DATA_NEEDED: junction operating temperature range] | -55°C to +175°C (junction) |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Qg typ @ VGS=10V] |
| Lead-Free / RoHS | RoHS Compliant | — |
| Ordering Code Suffix | GXKSA1 (Tube pack, RoHS compliant) | — |
| FET Type | — | N-Channel |
| Drain to Source Voltage (Vdss) | — | 80 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 100 A |
| RDS(on) Max @ VGS=10V | — | 3.75 mΩ |
| Drive Voltage (Max RDS(on), Min RDS(on)) | — | 6 V, 10 V |
| Power Dissipation (Pd) @ Tc=25°C | — | 214 W |
| Pin Count | — | 3 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typ/min/max] |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS] |
| RoHS Status | — | Compliant |