IPP075N15N3GXKSA1 vs IPP037N08N3GXKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP075N15N3GXKSA1 disebabkan oleh Infineon dan IPP037N08N3GXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPP075N15N3GXKSA1 | IPP037N08N3GXKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel MOSFET (OptiMOS 3) | MOSFET (Metal Oxide) - OptiMOS™ 3 |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Power Dissipation (PD, Tc=25C) | 300 W | — |
| On-State Resistance (RDS(on) max, VGS=10V) | 7.5 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage absolute max] | — |
| Kemasan | PG-TO220-3 (TO-220 through-hole) | PG-TO220-3 (Through Hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Gambaran Suhu Operasi | [DATA_NEEDED: junction operating temperature range] | -55°C to +175°C (junction) |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Qg typ @ VGS=10V] |
| Lead-Free / RoHS | RoHS Compliant | — |
| Ordering Code Suffix | GXKSA1 (Tube pack, RoHS compliant) | — |
| FET Type | — | N-Channel |
| Drain to Source Voltage (Vdss) | — | 80 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 100 A |
| RDS(on) Max @ VGS=10V | — | 3.75 mΩ |
| Drive Voltage (Max RDS(on), Min RDS(on)) | — | 6 V, 10 V |
| Power Dissipation (Pd) @ Tc=25°C | — | 214 W |
| Kiraan Pin | — | 3 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typ/min/max] |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS] |
| Status RoHS | — | Compliant |