IPT015N10NF2SATMA1 vs IPB024N10N5ATMA1 Comparison

Detailed side-by-side comparison of IPT015N10NF2SATMA1 by Infineon and IPB024N10N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPT015N10NF2SATMA1 IPB024N10N5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 315 A —
Continuous Drain Current (ID, Ta) 35 A —
On-Resistance (RDS(on)) at VGS=10V 1.5 mΩ —
Gate-Source Threshold (VGS(th)) 3.8 V at 267 µA —
Total Power Dissipation (Ta) 3.8 W —
Total Power Dissipation (Tc) 300 W —
Operating Temperature Range -55 °C to +175 °C -55C to +175C (junction)
Package PG-HSOF-8-10 (9-pin, 8+tab) PG-TO263-7 (D2PAK-7)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS trench, N-channel enhancement OptiMOS 5 N-Channel MOSFET (trench, shielded gate)
Gate Drive Voltage (typ) 10 V —
Single Pulse Avalanche Energy [DATA_NEEDED: EAS value] —
RoHS Status Compliant Compliant
Continuous Drain Current (ID, TC=25C) — 180 A
Power Dissipation (PD, TC=25C) — 250 W
On-Resistance RDS(on) max @ VGS=10V — 2.4 mΩ
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: Qg total gate charge]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total gate charge]
Input Capacitance Ciss — [DATA_NEEDED: Ciss value]
Output Capacitance Coss — [DATA_NEEDED: Coss value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
MSL Level — 1 (unlimited floor life at <30C/85% RH)
Packaging — Tape & Reel (13-inch reel)
Halogen Free — Yes (per Infineon product family policy)

Datasheets & Resources

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