IPT015N10NF2SATMA1 vs IPB024N10N5ATMA1 比較
詳細並排比較 IPT015N10NF2SATMA1 由 Infineon 與 IPB024N10N5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPT015N10NF2SATMA1 | IPB024N10N5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 315 A | — |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| 工作溫度範圍 | -55 °C to +175 °C | -55C to +175C (junction) |
| 封裝 | PG-HSOF-8-10 (9-pin, 8+tab) | PG-TO263-7 (D2PAK-7) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) |
| Gate Drive Voltage (typ) | 10 V | — |
| 單脈衝突崩能量 | [DATA_NEEDED: EAS value] | — |
| RoHS 狀態 | Compliant | Compliant |
| Continuous Drain Current (ID, TC=25C) | — | 180 A |
| Power Dissipation (PD, TC=25C) | — | 250 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 2.4 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: Qg total gate charge] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total gate charge] |
| Input Capacitance Ciss | — | [DATA_NEEDED: Ciss value] |
| Output Capacitance Coss | — | [DATA_NEEDED: Coss value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| MSL 等級 | — | 1 (unlimited floor life at <30C/85% RH) |
| Packaging | — | Tape & Reel (13-inch reel) |
| 無鹵素 | — | Yes (per Infineon product family policy) |