IPT015N10NF2SATMA1 vs IPB024N10N5ATMA1 Perbandingan

Perbandingan bersamaan detil IPT015N10NF2SATMA1 dari Infineon dan IPB024N10N5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPT015N10NF2SATMA1 IPB024N10N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 315 A —
Continuous Drain Current (ID, Ta) 35 A —
On-Resistance (RDS(on)) at VGS=10V 1.5 mΩ —
Gate-Source Threshold (VGS(th)) 3.8 V at 267 µA —
Total Power Dissipation (Ta) 3.8 W —
Total Power Dissipation (Tc) 300 W —
Rentang Suhu Kerja -55 °C to +175 °C -55C to +175C (junction)
Paket PG-HSOF-8-10 (9-pin, 8+tab) PG-TO263-7 (D2PAK-7)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS trench, N-channel enhancement OptiMOS 5 N-Channel MOSFET (trench, shielded gate)
Gate Drive Voltage (typ) 10 V —
Energi Pulsa Tandai [DATA_NEEDED: EAS value] —
Status RoHS Compliant Compliant
Continuous Drain Current (ID, TC=25C) — 180 A
Power Dissipation (PD, TC=25C) — 250 W
On-Resistance RDS(on) max @ VGS=10V — 2.4 mΩ
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: Qg total gate charge]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total gate charge]
Input Capacitance Ciss — [DATA_NEEDED: Ciss value]
Output Capacitance Coss — [DATA_NEEDED: Coss value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Level MSL — 1 (unlimited floor life at <30C/85% RH)
Packaging — Tape & Reel (13-inch reel)
Bebas Halogen — Yes (per Infineon product family policy)

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