IPT60R050G7XTMA1 vs ISZ230N10NM6ATMA1 Comparison

Detailed side-by-side comparison of IPT60R050G7XTMA1 by Infineon and ISZ230N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPT60R050G7XTMA1

IPT60R050G7XTMA1 - 600V 44A 50mΞ© CoolMOS G7 MOSFET | Infineon

IPT60R050G7XTMA1 βœ“ Active
Infineon
ISZ230N10NM6ATMA1

ISZ230N10NM6ATMA1 - 100V 31A OptiMOS 6 N-MOSFET | Infineon

ISZ230N10NM6ATMA1 βœ“ Active

Specification Comparison

Parameter IPT60R050G7XTMA1 ISZ230N10NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $0.71
Manufacturer Infineon Technologies β€”
Series CoolMOS G7 (C7 Gold) β€”
Technology Superjunction N-Channel MOSFET OptiMOS 6 trench MOSFET
Polarity N-Channel β€”
Drain-Source Voltage (Vdss) 600 V β€”
Continuous Drain Current (Id) at Tc=25C 44 A β€”
Drain-Source On-Resistance (Rds(on)) max 50 mOhm β€”
Maximum Power Dissipation (Pd) at Tc=25C 245 W β€”
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] β€”
Gate Charge (Qg) typ [DATA_NEEDED: Qg typ value] β€”
Package PG-HSOF-8-2 (TO-Leadless / TOLL) PG-TSDSON-8 FL (3.3 x 3.3 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C -55 Β°C to +150 Β°C (junction)
RoHS Status Compliant Compliant
Kelvin Source Pin Yes (pin 8) β€”
Polarity / Channel Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (Ta) β€” 7.7 A
Continuous Drain Current (Tc) β€” 31 A
Power Dissipation (Ta) β€” 3 W
Power Dissipation (Tc) β€” 48 W
On-Resistance RDS(on) at VGS=10V β€” 23 mΞ© (typ, ID=10A)
Gate Threshold Voltage VGS(th) β€” 3.3 V (typ at 13 Β΅A)
Gate Drive Voltage (recommended) β€” 10 V
MSL Level β€” MSL1 (per JEDEC J-STD-020)
Family β€” OptiMOS 6 (100V class)

Datasheets & Resources

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