IPT60R050G7XTMA1 vs ISZ230N10NM6ATMA1 Perbandingan
Perbandingan bersamaan detil IPT60R050G7XTMA1 dari Infineon dan ISZ230N10NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPT60R050G7XTMA1 | ISZ230N10NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS G7 (C7 Gold) | — |
| Technology | Superjunction N-Channel MOSFET | OptiMOS 6 trench MOSFET |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vdss) | 600 V | — |
| Continuous Drain Current (Id) at Tc=25C | 44 A | — |
| Drain-Source On-Resistance (Rds(on)) max | 50 mOhm | — |
| Maximum Power Dissipation (Pd) at Tc=25C | 245 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg typ value] | — |
| Paket | PG-HSOF-8-2 (TO-Leadless / TOLL) | PG-TSDSON-8 FL (3.3 x 3.3 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C | -55 °C to +150 °C (junction) |
| Status RoHS | Compliant | Compliant |
| Kelvin Source Pin | Yes (pin 8) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (Ta) | — | 7.7 A |
| Continuous Drain Current (Tc) | — | 31 A |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 48 W |
| On-Resistance RDS(on) at VGS=10V | — | 23 mΩ (typ, ID=10A) |
| Gate Threshold Voltage VGS(th) | — | 3.3 V (typ at 13 µA) |
| Gate Drive Voltage (recommended) | — | 10 V |
| Level MSL | — | MSL1 (per JEDEC J-STD-020) |
| Family | — | OptiMOS 6 (100V class) |