IPT60R050G7XTMA1 vs ISZ230N10NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT60R050G7XTMA1 disebabkan oleh Infineon dan ISZ230N10NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPT60R050G7XTMA1 | ISZ230N10NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS G7 (C7 Gold) | — |
| Technology | Superjunction N-Channel MOSFET | OptiMOS 6 trench MOSFET |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vdss) | 600 V | — |
| Continuous Drain Current (Id) at Tc=25C | 44 A | — |
| Drain-Source On-Resistance (Rds(on)) max | 50 mOhm | — |
| Maximum Power Dissipation (Pd) at Tc=25C | 245 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg typ value] | — |
| Kemasan | PG-HSOF-8-2 (TO-Leadless / TOLL) | PG-TSDSON-8 FL (3.3 x 3.3 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +150C | -55 °C to +150 °C (junction) |
| Status RoHS | Compliant | Compliant |
| Kelvin Source Pin | Yes (pin 8) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (Ta) | — | 7.7 A |
| Continuous Drain Current (Tc) | — | 31 A |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 48 W |
| On-Resistance RDS(on) at VGS=10V | — | 23 mΩ (typ, ID=10A) |
| Gate Threshold Voltage VGS(th) | — | 3.3 V (typ at 13 µA) |
| Gate Drive Voltage (recommended) | — | 10 V |
| Aras MSL | — | MSL1 (per JEDEC J-STD-020) |
| Family | — | OptiMOS 6 (100V class) |