IQD016N08NM5ATMA1 vs IQE050N08NM5CGATMA1 Perbandingan
Perbandingan bersamaan detil IQD016N08NM5ATMA1 dari Infineon dan IQE050N08NM5CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon
IQE050N08NM5CGATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQD016N08NM5ATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (Ta) | 31 A | 16 A |
| Continuous Drain Current (Tc) | 323 A | 101 A |
| On-Resistance RDS(on) typical | 1.6 mΩ | — |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 333 W | 100 W |
| Paket | PG-TSON-8-9 (PQFN 5x6) | PG-TTFN-9-1 (Surface Mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 Power-MOSFET | OptiMOS 5 (Source-Down) |
| Rentang Suhu Kerja | -55C to +150C (junction, standard MOSFET rating) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typical] | — |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Suhu Kerja | — | -55°C to +175°C (TJ max) |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |
| Level MSL | — | [DATA_NEEDED: MSL rating] |