IQDH35N03LM5CGATMA1 vs BSZ065N03LSATMA1 Comparison
Detailed side-by-side comparison of IQDH35N03LM5CGATMA1 by Infineon and BSZ065N03LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΩ N-Channel MOSFET | Infineon
IQDH35N03LM5CGATMA1 ✓ ActiveSpecification Comparison
| Parameter | IQDH35N03LM5CGATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 0.35 mΩ (typical at VGS=10 V) | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| Operating Temperature Range | -55 °C to +175 °C | -55C to +150C (junction) |
| Package | PG-TTFN-9-U02 (PQFN 5x6 mm²) | — |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 |
| RoHS Status | Compliant | Compliant |
| Halogen Free | Yes | — |
| Channel Type | N-Channel | — |
| Technology | OptiMOS 5 trench MOSFET | Trench MOSFET (OptiMOS) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 30V |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 12 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 26 W |
| Package / Case | — | PG-TSDSON-8-FL (S308) |
| Configuration | — | Single N-Channel |
| Gate Drive (typical) | — | 4.5 V |