IQDH35N03LM5CGATMA1 vs BSZ065N03LSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH35N03LM5CGATMA1 disebabkan oleh Infineon dan BSZ065N03LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΩ N-Channel MOSFET | Infineon
IQDH35N03LM5CGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQDH35N03LM5CGATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 0.35 mΩ (typical at VGS=10 V) | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C | -55C to +150C (junction) |
| Kemasan | PG-TTFN-9-U02 (PQFN 5x6 mm²) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 | 1 |
| Status RoHS | Compliant | Compliant |
| Boson Bebas | Yes | — |
| Channel Type | N-Channel | — |
| Technology | OptiMOS 5 trench MOSFET | Trench MOSFET (OptiMOS) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 30V |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 12 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 26 W |
| Kemasan / Case | — | PG-TSDSON-8-FL (S308) |
| Configuration | — | Single N-Channel |
| Gate Drive (typical) | — | 4.5 V |