IQDH35N03LM5CGATMA1 vs BSZ065N03LSATMA1 Perbandingan
Perbandingan bersamaan detil IQDH35N03LM5CGATMA1 dari Infineon dan BSZ065N03LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΩ N-Channel MOSFET | Infineon
IQDH35N03LM5CGATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQDH35N03LM5CGATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 0.35 mΩ (typical at VGS=10 V) | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| Rentang Suhu Kerja | -55 °C to +175 °C | -55C to +150C (junction) |
| Paket | PG-TTFN-9-U02 (PQFN 5x6 mm²) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 | 1 |
| Status RoHS | Compliant | Compliant |
| Bebas Halogen | Yes | — |
| Channel Type | N-Channel | — |
| Technology | OptiMOS 5 trench MOSFET | Trench MOSFET (OptiMOS) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 30V |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 12 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 26 W |
| Paket / Case | — | PG-TSDSON-8-FL (S308) |
| Configuration | — | Single N-Channel |
| Gate Drive (typical) | — | 4.5 V |